Optical Dependence of Electrically Detected Magnetic Resonance in Lightly Doped Si:P Devices
AbstractUsing frequency-modulated electrically detected magnetic resonance (EDMR), we show that signals measured from lightly doped (1.2–5×1015 cm-3) silicon devices vary significantly with the wavelength of the optical excitation used to generate the mobile carriers. We measure EDMR spectra at 4.2 K as a function of modulation frequency and applied microwave power using a 980-nm laser, a 405-nm laser, and a broadband white-light source. EDMR signals are observed from the phosphorus donor and two distinct defect species in all of the experiments. With near-infrared irradiation, we find that the EDMR signal primarily arises from donor-defect pairs, while, at higher photon energies, there are significant additional contributions from defect-defect pairs. The contribution of spins from different spatial regions to the EDMR signal is seen to vary as the optical penetration depth changes from about 120 nm at 405-nm illumination to 100 μm at 980-nm illumination. The modulation frequency dependence of the EDMR signal shows that the energy of the optical excitation strongly modulates the kinetics of the underlying spin-dependent recombination (SDR) process. Careful tuning of the optical photon energy could therefore be used to control both the subset of spin pairs contributing to the EDMR signal and the dynamics of the SDR process.