Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

Influence of carrier localization at the core/shell interface on the temperature dependence of... We have systematically investigated the temperature dependence of absorption, photoluminescence (PL), and PL decay profiles in CdTe-core and CdTe/CdS type-II quantum dots (QDs). In CdTe/CdS QDs, Stokes shifts and PL decay time become larger with an increase in temperature above 120 K, while those in CdTe-core QDs are almost independent of temperature. The unusual temperature dependence of Stokes shifts and PL decay time in CdTe/CdS QDs is understood by considering carrier localization at the core/shell interface at low temperatures and thermal-energy-assisted detrapping from localized-exciton to type-II exciton states at higher temperatures. Furthermore, a phenomenological rate-equation model is developed to explain the experimentally observed temperature-dependent PL decay time. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

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Influence of carrier localization at the core/shell interface on the temperature dependence of the Stokes shift and the photoluminescence decay time in CdTe/CdS type-II quantum dots

Abstract

We have systematically investigated the temperature dependence of absorption, photoluminescence (PL), and PL decay profiles in CdTe-core and CdTe/CdS type-II quantum dots (QDs). In CdTe/CdS QDs, Stokes shifts and PL decay time become larger with an increase in temperature above 120 K, while those in CdTe-core QDs are almost independent of temperature. The unusual temperature dependence of Stokes shifts and PL decay time in CdTe/CdS QDs is understood by considering carrier localization at the core/shell interface at low temperatures and thermal-energy-assisted detrapping from localized-exciton to type-II exciton states at higher temperatures. Furthermore, a phenomenological rate-equation model is developed to explain the experimentally observed temperature-dependent PL decay time.
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Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.035305
Publisher site
See Article on Publisher Site

Abstract

We have systematically investigated the temperature dependence of absorption, photoluminescence (PL), and PL decay profiles in CdTe-core and CdTe/CdS type-II quantum dots (QDs). In CdTe/CdS QDs, Stokes shifts and PL decay time become larger with an increase in temperature above 120 K, while those in CdTe-core QDs are almost independent of temperature. The unusual temperature dependence of Stokes shifts and PL decay time in CdTe/CdS QDs is understood by considering carrier localization at the core/shell interface at low temperatures and thermal-energy-assisted detrapping from localized-exciton to type-II exciton states at higher temperatures. Furthermore, a phenomenological rate-equation model is developed to explain the experimentally observed temperature-dependent PL decay time.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jul 18, 2017

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