Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic Device Modeling [Phys. Rev. Applied 2, 014008 (2014)]

Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic... PHYSICAL REVIEW APPLIED 8, 019902 (2017) Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic Device Modeling [Phys. Rev. Applied 2, 014008 (2014)] Michael C. Heiber and Ali Dhinojwala (Received 14 April 2017; published 20 July 2017) DOI: 10.1103/PhysRevApplied.8.019902 The computational software tool that we have developed and used in the original paper has been found to contain a bug that significantly affects some of the results of the study. We report here updated results from the corrected software tool. The phase separation process in the previously presented Ising-based morphology model proceeds by a series of site- swapping attempts, where neighboring sites of opposing types are swapped with a probability that depends on the interaction energy (J). In v1.0 and v2.0 of the ISING_OPV morphology generation tool [1,2], there was a bug in the code that affected how the pair of sites was randomly selected before undergoing a swap attempt. This systematic error caused anisotropic domain growth during phase separation. In effect, the domains had a slight preference for growing in the x and/or y directions of the lattice (parallel to the plane of the film) relative to the z direction (film thickness direction). This bug was http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review Applied American Physical Society (APS)

Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic Device Modeling [Phys. Rev. Applied 2, 014008 (2014)]

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Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic Device Modeling [Phys. Rev. Applied 2, 014008 (2014)]

Abstract

PHYSICAL REVIEW APPLIED 8, 019902 (2017) Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic Device Modeling [Phys. Rev. Applied 2, 014008 (2014)] Michael C. Heiber and Ali Dhinojwala (Received 14 April 2017; published 20 July 2017) DOI: 10.1103/PhysRevApplied.8.019902 The computational software tool that we have developed and used in the original paper has been found to contain a bug that significantly affects some of the results of the study. We report here updated results from the corrected software tool. The phase separation process in the previously presented Ising-based morphology model proceeds by a series of site- swapping attempts, where neighboring sites of opposing types are swapped with a probability that depends on the interaction energy (J). In v1.0 and v2.0 of the ISING_OPV morphology generation tool [1,2], there was a bug in the code that affected how the pair of sites was randomly selected before undergoing a swap attempt. This systematic error caused anisotropic domain growth during phase separation. In effect, the domains had a slight preference for growing in the x and/or y directions of the lattice (parallel to the plane of the film) relative to the z direction (film thickness direction). This bug was
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Publisher
The American Physical Society
Copyright
Copyright © © 2017 American Physical Society
eISSN
2331-7019
D.O.I.
10.1103/PhysRevApplied.8.019902
Publisher site
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Abstract

PHYSICAL REVIEW APPLIED 8, 019902 (2017) Erratum: Efficient Generation of Model Bulk Heterojunction Morphologies for Organic Photovoltaic Device Modeling [Phys. Rev. Applied 2, 014008 (2014)] Michael C. Heiber and Ali Dhinojwala (Received 14 April 2017; published 20 July 2017) DOI: 10.1103/PhysRevApplied.8.019902 The computational software tool that we have developed and used in the original paper has been found to contain a bug that significantly affects some of the results of the study. We report here updated results from the corrected software tool. The phase separation process in the previously presented Ising-based morphology model proceeds by a series of site- swapping attempts, where neighboring sites of opposing types are swapped with a probability that depends on the interaction energy (J). In v1.0 and v2.0 of the ISING_OPV morphology generation tool [1,2], there was a bug in the code that affected how the pair of sites was randomly selected before undergoing a swap attempt. This systematic error caused anisotropic domain growth during phase separation. In effect, the domains had a slight preference for growing in the x and/or y directions of the lattice (parallel to the plane of the film) relative to the z direction (film thickness direction). This bug was

Journal

Physical Review AppliedAmerican Physical Society (APS)

Published: Jul 1, 2017

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