Equation of state for charge-doping-induced deformation and hardening in cubic crystals

Equation of state for charge-doping-induced deformation and hardening in cubic crystals Charge doping would inevitably induce strain, which can significantly influence device performance but cannot be directly predicted by classical mechanical laws. Here we present a set of equations of states for deformable cubic crystals subjected to charge doping by introducing the quantum electronic stress at fixed lattice as equivalent mechanical pressure into the classical hydrostatic pressure-vs-deformation equations. The equations are proved to be efficient for all the cubic crystals considered in this work (diamond, Si, Ge, GaAs, Al, and ZrO2) by first-principles calculations. The proposed method and presented equations should pave a convenient way to predict doping effects on device performance. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Equation of state for charge-doping-induced deformation and hardening in cubic crystals

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Equation of state for charge-doping-induced deformation and hardening in cubic crystals

Abstract

Charge doping would inevitably induce strain, which can significantly influence device performance but cannot be directly predicted by classical mechanical laws. Here we present a set of equations of states for deformable cubic crystals subjected to charge doping by introducing the quantum electronic stress at fixed lattice as equivalent mechanical pressure into the classical hydrostatic pressure-vs-deformation equations. The equations are proved to be efficient for all the cubic crystals considered in this work (diamond, Si, Ge, GaAs, Al, and ZrO2) by first-principles calculations. The proposed method and presented equations should pave a convenient way to predict doping effects on device performance.
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Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.064101
Publisher site
See Article on Publisher Site

Abstract

Charge doping would inevitably induce strain, which can significantly influence device performance but cannot be directly predicted by classical mechanical laws. Here we present a set of equations of states for deformable cubic crystals subjected to charge doping by introducing the quantum electronic stress at fixed lattice as equivalent mechanical pressure into the classical hydrostatic pressure-vs-deformation equations. The equations are proved to be efficient for all the cubic crystals considered in this work (diamond, Si, Ge, GaAs, Al, and ZrO2) by first-principles calculations. The proposed method and presented equations should pave a convenient way to predict doping effects on device performance.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Aug 1, 2017

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