Effect of the Rashba splitting on the RKKY interaction in topological-insulator thin films

Effect of the Rashba splitting on the RKKY interaction in topological-insulator thin films We investigate the effect of Rashba splitting on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in a topological-insulator (TI) thin film both at finite and zero chemical potential. We show that the spin susceptibility of the TI thin film depends strongly on the direction of the distance vector between impurities. In addition to the well-known Heisenberg-, Ising-, and Dzyaloshinskii-Moria (DM)-like terms reported before in TIs, we find another term in the off-diagonal part of the spin-susceptibility tensor which is symmetric in contrast to the DM term. Furthermore, we show how one can tune the RKKY interaction by using electric field applied perpendicularly to the surface plane of the TI, where in the presence of such a field the RKKY interaction can be enhanced drastically for small chemical doping. We present our results for two different situations, namely intersurface pairing of magnetic impurities as well as intrasurface pairing. The behavior of these two situations is completely different, which we describe by mapping the density of states of each surface on the band dispersion. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Effect of the Rashba splitting on the RKKY interaction in topological-insulator thin films

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Effect of the Rashba splitting on the RKKY interaction in topological-insulator thin films

Abstract

We investigate the effect of Rashba splitting on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in a topological-insulator (TI) thin film both at finite and zero chemical potential. We show that the spin susceptibility of the TI thin film depends strongly on the direction of the distance vector between impurities. In addition to the well-known Heisenberg-, Ising-, and Dzyaloshinskii-Moria (DM)-like terms reported before in TIs, we find another term in the off-diagonal part of the spin-susceptibility tensor which is symmetric in contrast to the DM term. Furthermore, we show how one can tune the RKKY interaction by using electric field applied perpendicularly to the surface plane of the TI, where in the presence of such a field the RKKY interaction can be enhanced drastically for small chemical doping. We present our results for two different situations, namely intersurface pairing of magnetic impurities as well as intrasurface pairing. The behavior of these two situations is completely different, which we describe by mapping the density of states of each surface on the band dispersion.
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Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.024413
Publisher site
See Article on Publisher Site

Abstract

We investigate the effect of Rashba splitting on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in a topological-insulator (TI) thin film both at finite and zero chemical potential. We show that the spin susceptibility of the TI thin film depends strongly on the direction of the distance vector between impurities. In addition to the well-known Heisenberg-, Ising-, and Dzyaloshinskii-Moria (DM)-like terms reported before in TIs, we find another term in the off-diagonal part of the spin-susceptibility tensor which is symmetric in contrast to the DM term. Furthermore, we show how one can tune the RKKY interaction by using electric field applied perpendicularly to the surface plane of the TI, where in the presence of such a field the RKKY interaction can be enhanced drastically for small chemical doping. We present our results for two different situations, namely intersurface pairing of magnetic impurities as well as intrasurface pairing. The behavior of these two situations is completely different, which we describe by mapping the density of states of each surface on the band dispersion.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jul 12, 2017

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