Edge transport in InAs and InAs/GaSb quantum wells

Edge transport in InAs and InAs/GaSb quantum wells We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)
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Edge transport in InAs and InAs/GaSb quantum wells

Abstract

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.
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Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.075406
Publisher site
See Article on Publisher Site

Abstract

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Aug 4, 2017

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