Edge transport in InAs and InAs/GaSb quantum wells

Edge transport in InAs and InAs/GaSb quantum wells We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)
Preview Only

Edge transport in InAs and InAs/GaSb quantum wells

Abstract

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.
Loading next page...
 
/lp/aps_physical/edge-transport-in-inas-and-inas-gasb-quantum-wells-TzfroovENw
Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.075406
Publisher site
See Article on Publisher Site

Abstract

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Aug 4, 2017

There are no references for this article.

Sorry, we don’t have permission to share this article on DeepDyve,
but here are related articles that you can start reading right now:

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off