Edge transport in InAs and InAs/GaSb quantum wells
AbstractWe investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Nonlocal measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1–2kΩ/μm is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in a tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger-gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.