Direct visualization of a two-dimensional topological insulator in the single-layer 1T′-WTe2

Direct visualization of a two-dimensional topological insulator in the single-layer 1T′-WTe2 We have grown nearly freestanding single-layer 1T′-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterized its electronic structure with scanning tunneling microscopy/spectroscopy (STM/STS). The existence of topological edge states at the periphery of single-layer WTe2 islands was confirmed. Surprisingly, a bulk band gap at the Fermi level and insulating behaviors were also found in single-layer WTe2 at low temperature, which are likely associated with an incommensurate charge order transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition-metal dichalcogenide provides a promising platform for further exploration of the 2D TIs’ physics and related applications. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Direct visualization of a two-dimensional topological insulator in the single-layer 1T′-WTe2

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Direct visualization of a two-dimensional topological insulator in the single-layer 1T′-WTe2

Abstract

We have grown nearly freestanding single-layer 1T′-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterized its electronic structure with scanning tunneling microscopy/spectroscopy (STM/STS). The existence of topological edge states at the periphery of single-layer WTe2 islands was confirmed. Surprisingly, a bulk band gap at the Fermi level and insulating behaviors were also found in single-layer WTe2 at low temperature, which are likely associated with an incommensurate charge order transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition-metal dichalcogenide provides a promising platform for further exploration of the 2D TIs’ physics and related applications.
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Publisher
The American Physical Society
Copyright
Copyright © ©2017 American Physical Society
ISSN
1098-0121
eISSN
1550-235X
D.O.I.
10.1103/PhysRevB.96.041108
Publisher site
See Article on Publisher Site

Abstract

We have grown nearly freestanding single-layer 1T′-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterized its electronic structure with scanning tunneling microscopy/spectroscopy (STM/STS). The existence of topological edge states at the periphery of single-layer WTe2 islands was confirmed. Surprisingly, a bulk band gap at the Fermi level and insulating behaviors were also found in single-layer WTe2 at low temperature, which are likely associated with an incommensurate charge order transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition-metal dichalcogenide provides a promising platform for further exploration of the 2D TIs’ physics and related applications.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jul 7, 2017

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