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The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials

The Monte Carlo method for the solution of charge transport in semiconductors with applications... This review presents in a comprehensive and tutorial form the basic principles of the Monte Carlo method, as applied to the solution of transport problems in semiconductors. Sufficient details of a typical Monte Carlo simulation have been given to allow the interested reader to create his own Monte Carlo program, and the method has been briefly compared with alternative theoretical techniques. Applications have been limited to the case of covalent semiconductors. Particular attention has been paid to the evaluation of the integrated scattering probabilities, for which final expressions are given in a form suitable for their direct use. A collection of results obtained with Monte Carlo simulations is presented, with the aim of showing the power of the method in obtaining physical insights into the processes under investigation. Special technical aspects of the method and updated microscopic models have been treated in some appendixes. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Reviews of Modern Physics American Physical Society (APS)

The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials

Reviews of Modern Physics , Volume 55 (3) – Jul 1, 1983
61 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1983 The American Physical Society
ISSN
1539-0756
DOI
10.1103/RevModPhys.55.645
Publisher site
See Article on Publisher Site

Abstract

This review presents in a comprehensive and tutorial form the basic principles of the Monte Carlo method, as applied to the solution of transport problems in semiconductors. Sufficient details of a typical Monte Carlo simulation have been given to allow the interested reader to create his own Monte Carlo program, and the method has been briefly compared with alternative theoretical techniques. Applications have been limited to the case of covalent semiconductors. Particular attention has been paid to the evaluation of the integrated scattering probabilities, for which final expressions are given in a form suitable for their direct use. A collection of results obtained with Monte Carlo simulations is presented, with the aim of showing the power of the method in obtaining physical insights into the processes under investigation. Special technical aspects of the method and updated microscopic models have been treated in some appendixes.

Journal

Reviews of Modern PhysicsAmerican Physical Society (APS)

Published: Jul 1, 1983

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