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Systematic study of the surface photovoltaic effect in photoemission

Systematic study of the surface photovoltaic effect in photoemission The effects of a surface photovoltage on band bending determined by photoemission were investigated experimentally and theoretically for Cs on p -type GaAs(110). Calculations based on carrier recombination by thermionic emission as well as tunneling are in excellent agreement with experimental data. Surface photovoltages are found to contribute noticeably only in the case of low dopant concentrations n and low temperatures (n< 10 18 / cm 3 and T <280 K for a Schottky-barrier height of 0.7 eV). General criteria for the influence of surface photovoltages in photoemission studies of Schottky contacts are established. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Systematic study of the surface photovoltaic effect in photoemission

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1991 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.44.4002
Publisher site
See Article on Publisher Site

Abstract

The effects of a surface photovoltage on band bending determined by photoemission were investigated experimentally and theoretically for Cs on p -type GaAs(110). Calculations based on carrier recombination by thermionic emission as well as tunneling are in excellent agreement with experimental data. Surface photovoltages are found to contribute noticeably only in the case of low dopant concentrations n and low temperatures (n< 10 18 / cm 3 and T <280 K for a Schottky-barrier height of 0.7 eV). General criteria for the influence of surface photovoltages in photoemission studies of Schottky contacts are established.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Aug 15, 1991

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