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Superlattice band structure in the envelope-function approximation

Superlattice band structure in the envelope-function approximation The band structure of GaAs-GaAlAs and InAs-GaSb superlattices is calculated by matching propagating or evanescent envelope functions at the boundary of consecutive layers. For GaAs-GaAlAs materials, the envelope functions are the solutions of an effective Hamiltonian in which both band edges and effective masses are position dependent. The effective-mass jumps modify the boundary conditions which are imposed to the eigenstates of the effective-mass Hamiltonian. In InAs-GaSb superlattices, the dispersion relations, although quite similar to those obtained in GaAs-GaAlAs materials, reflect the genuine symmetry mismatch of InAs (electrons) and GaSb (light-holes) levels. The evolution of the InAs-GaSb band structure with increasing periodicity is calculated and found to be in excellent agreement with previous LCAO results. The dispersion relations of heavy-hole bands are obtained. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Superlattice band structure in the envelope-function approximation

Physical Review B , Volume 24 (10) – Nov 15, 1981
5 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1981 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.24.5693
Publisher site
See Article on Publisher Site

Abstract

The band structure of GaAs-GaAlAs and InAs-GaSb superlattices is calculated by matching propagating or evanescent envelope functions at the boundary of consecutive layers. For GaAs-GaAlAs materials, the envelope functions are the solutions of an effective Hamiltonian in which both band edges and effective masses are position dependent. The effective-mass jumps modify the boundary conditions which are imposed to the eigenstates of the effective-mass Hamiltonian. In InAs-GaSb superlattices, the dispersion relations, although quite similar to those obtained in GaAs-GaAlAs materials, reflect the genuine symmetry mismatch of InAs (electrons) and GaSb (light-holes) levels. The evolution of the InAs-GaSb band structure with increasing periodicity is calculated and found to be in excellent agreement with previous LCAO results. The dispersion relations of heavy-hole bands are obtained.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Nov 15, 1981

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