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Size effects in surface-reconstructed ⟨ 100 ⟩ and ⟨ 110 ⟩ silicon nanowires

Size effects in surface-reconstructed ⟨ 100 ⟩ and ⟨ 110 ⟩ silicon nanowires The geometrical and electronic structure properties of ⟨ 100 ⟩ and ⟨ 110 ⟩ silicon nanowires in the absence of surface passivation are studied by means of density-functional calculations. As we have shown in a recent publication R. Rurali and N. Lorente , Phys. Rev. Lett. 94 , 026805 ( 2005 ) the reconstruction of facets can give rise to surface metallic states. In this work, we analyze the dependence of geometric and electronic structure features on the size of the wire and on the growth direction. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Size effects in surface-reconstructed ⟨ 100 ⟩ and ⟨ 110 ⟩ silicon nanowires

Rurali, R
Physical Review B , Volume 74 (16) – Oct 15, 2006
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Publisher
American Physical Society (APS)
Copyright
Copyright © 2006 The American Physical Society
ISSN
1550-235X
DOI
10.1103/PhysRevB.74.165324
Publisher site
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Abstract

The geometrical and electronic structure properties of ⟨ 100 ⟩ and ⟨ 110 ⟩ silicon nanowires in the absence of surface passivation are studied by means of density-functional calculations. As we have shown in a recent publication R. Rurali and N. Lorente , Phys. Rev. Lett. 94 , 026805 ( 2005 ) the reconstruction of facets can give rise to surface metallic states. In this work, we analyze the dependence of geometric and electronic structure features on the size of the wire and on the growth direction.

Journal

Physical Review B – American Physical Society (APS)

Published: Oct 15, 2006

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