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- Publisher
- American Physical Society (APS)
- Copyright
- Copyright © 2007 The American Physical Society
- ISSN
- 1550-235X
- DOI
- 10.1103/PhysRevB.76.054301
- Publisher site
- See Article on Publisher Site
Abstract
The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( < 2.5 cm − 1 linewidth) of the 0 → 1 and 1 → 2 vibrational transitions within the extensively inhomogeneously broadened ( 78 cm − 1 linewidth) Si-H vibrational band. There is no spectral diffusion evident in correlation spectra obtained at 0.2, 1, and 4 ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84 cm − 1 and decreases slightly with vibrational frequency. The 1 → 2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation Appl. Phys. Lett. 31 , 292 ( 1977 ) in a - Si : H based solar cells.
Journal
Physical Review B – American Physical Society (APS)
Published: Aug 1, 2007