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We investigated the physical properties of modulation-doped G a A s / G a 1 - x Al x As heterojunctions by photoluminescence. We found two types of transitions and attributed them to the space direct excitons in the GaAs flat band region and the space indirect excitons near the heterojunction notch. We propose the vertical transport of photoexcited carriers prior to the actual exciton formation under the influence of the two-dimensional carrier gas. Therefore, the photoluminescence intensities of the two types of excitons are correlated. The vertical transport model explains successfully the experimental results of the optically detected cyclotron resonance, the photoluminescence intensity oscillation with magnetic field and the long rise time of the photoluminescence intensity for the excitonic transitions.
Physical Review B – American Physical Society (APS)
Published: Mar 15, 1999
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