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Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide

Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide Optical-transmission measurements at 20 and 77 K were used to deduce the magnitude and spectral dependence of the optical cross section σ I for transitions from neutral Mn acceptors to the valence bands of GaAs. The threshold energy for such transitions is E a = 0.11 eV, and σ I was studied from threshold to 0.7 eV. The crystals used had 10 17 to 10 18 cm - 3 of uncompensated Mn acceptors, as determined by analysis of Hall-effect data over the 60-400-K range. The spectral dependence of σ I over the range 0.11-0.45 eV is in good agreement with Lucovsky's δ -function potential model, as has been reported previously. Comparisons between experiment and Lucovsky's model are complicated for photon energies above 0.46 eV by transitions to the split-off band of GaAs. In contrast to previous reports, we find that the magnitude of σ I (a maximum of 8 × 10 - 17 cm 2 at 0.22 eV) is in good agreement with Lucovsky's model for an effective-field ratio of unity. Thus we find that dielectric reinforcement of the electric vector for a photon interacting with a Mn acceptor (wave-function radius 10.1 Å) is negligible. A comparison of our data with quantum-defect models is less satisfactory than the δ -function model at low energies, but becomes more favorable in the spectral region for which the split-off band is involved. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1973 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.8.5664
Publisher site
See Article on Publisher Site

Abstract

Optical-transmission measurements at 20 and 77 K were used to deduce the magnitude and spectral dependence of the optical cross section σ I for transitions from neutral Mn acceptors to the valence bands of GaAs. The threshold energy for such transitions is E a = 0.11 eV, and σ I was studied from threshold to 0.7 eV. The crystals used had 10 17 to 10 18 cm - 3 of uncompensated Mn acceptors, as determined by analysis of Hall-effect data over the 60-400-K range. The spectral dependence of σ I over the range 0.11-0.45 eV is in good agreement with Lucovsky's δ -function potential model, as has been reported previously. Comparisons between experiment and Lucovsky's model are complicated for photon energies above 0.46 eV by transitions to the split-off band of GaAs. In contrast to previous reports, we find that the magnitude of σ I (a maximum of 8 × 10 - 17 cm 2 at 0.22 eV) is in good agreement with Lucovsky's model for an effective-field ratio of unity. Thus we find that dielectric reinforcement of the electric vector for a photon interacting with a Mn acceptor (wave-function radius 10.1 Å) is negligible. A comparison of our data with quantum-defect models is less satisfactory than the δ -function model at low energies, but becomes more favorable in the spectral region for which the split-off band is involved.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Dec 15, 1973

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