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Perturbation potential produced by a monolayer of InAs on GaAs(100)

Perturbation potential produced by a monolayer of InAs on GaAs(100) We present ab initio calculations, using the linear muffin-tin orbital tight-binding method, for the potential of an InAs (001) monolayer embedded in a GasAs matrix. This potential is compared with the one of bulk GasAs and the differences are described as an affective potential which arises from electronic charge density redistribution due to the inclusion of the InAs layer. The charge redistribution produces a potential well in the position of the In plane, surrounded by two barriers originated in charge transfer to the neighboring As planes. The effective potential is short ranged, and is confined to 15 Å around the In plane. The effect of relaxation at the interface is also investigated. The calculated potential has been used, within the effective mass approximation, to calculate the excitonic spectrum of a GaAs/InAs(ML)/GaAs heterostructure in the presence of an external magnetic field. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Perturbation potential produced by a monolayer of InAs on GaAs(100)

Barticevic, Z; Vargas, P; Pacheco, M; Altbir, D
Physical Review B , Volume 68 (15) – Oct 15, 2003
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Publisher
American Physical Society (APS)
Copyright
Copyright © 2003 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.68.155306
Publisher site
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Abstract

We present ab initio calculations, using the linear muffin-tin orbital tight-binding method, for the potential of an InAs (001) monolayer embedded in a GasAs matrix. This potential is compared with the one of bulk GasAs and the differences are described as an affective potential which arises from electronic charge density redistribution due to the inclusion of the InAs layer. The charge redistribution produces a potential well in the position of the In plane, surrounded by two barriers originated in charge transfer to the neighboring As planes. The effective potential is short ranged, and is confined to 15 Å around the In plane. The effect of relaxation at the interface is also investigated. The calculated potential has been used, within the effective mass approximation, to calculate the excitonic spectrum of a GaAs/InAs(ML)/GaAs heterostructure in the presence of an external magnetic field.

Journal

Physical Review B – American Physical Society (APS)

Published: Oct 15, 2003

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