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Negative Magnetoresistance in Doped Semiconductors

Negative Magnetoresistance in Doped Semiconductors A quadratic negative magnetoresistance is derived for a model in which the carrier mobility is limited by spin disorder. The method is then modified to show how a linear magnetoresistance may arise. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Negative Magnetoresistance in Doped Semiconductors

Boon, M. R
Physical Review B , Volume 7 (2) – Jan 15, 1973
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Publisher
American Physical Society (APS)
Copyright
Copyright © 1973 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.7.761
Publisher site
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Abstract

A quadratic negative magnetoresistance is derived for a model in which the carrier mobility is limited by spin disorder. The method is then modified to show how a linear magnetoresistance may arise.

Journal

Physical Review B – American Physical Society (APS)

Published: Jan 15, 1973

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