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Mechanism for spatial separation of charge carriers in inhomogeneous semiconductor alloys

Mechanism for spatial separation of charge carriers in inhomogeneous semiconductor alloys A novel mechanism is proposed for charge-carrier separation by band-edge steps in inhomogeneous alloys with sufficiently strong compositional fluctuations. The phenomenon is predicted to occur for alloy compositions where the highest valence band and the lowest conduction band have slopes of the same sign as a function of the average alloy composition. We discuss experimental data for indirect-gap Ga As 1 - x P x which provide confirmation of this prediction. Finally, other alloy systems and alloy structures for which related phenomena may occur are suggested. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Mechanism for spatial separation of charge carriers in inhomogeneous semiconductor alloys

Physical Review B , Volume 33 (12) – Jun 15, 1986
4 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1986 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.33.8776
Publisher site
See Article on Publisher Site

Abstract

A novel mechanism is proposed for charge-carrier separation by band-edge steps in inhomogeneous alloys with sufficiently strong compositional fluctuations. The phenomenon is predicted to occur for alloy compositions where the highest valence band and the lowest conduction band have slopes of the same sign as a function of the average alloy composition. We discuss experimental data for indirect-gap Ga As 1 - x P x which provide confirmation of this prediction. Finally, other alloy systems and alloy structures for which related phenomena may occur are suggested.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jun 15, 1986

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