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Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon

Influence of the statistical shift of Fermi level on the conductivity behavior in... The electrical conductivity behavior of highly crystalline undoped hydrogenated microcrystalline silicon ( μ c - Si : H ) films having different microstructures was studied. The dark conductivity is seen to follow the Meyer Neldel rule (MNR) in some films and anti-MNR in others, depending on the details of microstructural attributes and corresponding changes in the effective density of state distributions. A band tail transport and statistical shift of the Fermi level are used to explain the origin of MNR as well as anti-MNR in our samples. We present the evidence of anti-MNR in the various experimental transport data of μ c - Si : H materials reported in literature and analyze these data together with ours to show the consistency and physical plausibility of the statistical shift model. The calculated MNR parameters and other significant material parameters derived therefrom are tenable for a wide microstructural range of the μ c - Si : H system. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon

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Publisher
American Physical Society (APS)
Copyright
Copyright © 2008 The American Physical Society
ISSN
1550-235X
DOI
10.1103/PhysRevB.77.045212
Publisher site
See Article on Publisher Site

Abstract

The electrical conductivity behavior of highly crystalline undoped hydrogenated microcrystalline silicon ( μ c - Si : H ) films having different microstructures was studied. The dark conductivity is seen to follow the Meyer Neldel rule (MNR) in some films and anti-MNR in others, depending on the details of microstructural attributes and corresponding changes in the effective density of state distributions. A band tail transport and statistical shift of the Fermi level are used to explain the origin of MNR as well as anti-MNR in our samples. We present the evidence of anti-MNR in the various experimental transport data of μ c - Si : H materials reported in literature and analyze these data together with ours to show the consistency and physical plausibility of the statistical shift model. The calculated MNR parameters and other significant material parameters derived therefrom are tenable for a wide microstructural range of the μ c - Si : H system.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jan 15, 2008

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