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Platinum diffusion gives rise to three energy levels in our silicon samples. Deep-level transient spectroscopy detects acceptor levels at E c - 235 meV and E c - 500 meV, and a donor level at E v + 320 meV. The energy shift under hydrostatic pressure for either level was measured for pressures up to 0.50 GPa. The Pt acceptor at E c - 235 meV reveals the same pressure coefficient as was already reported for the well-known A center. This common property supports the recently proposed model of a vacancy-related structure for the substitutional Pt.
Physical Review B – American Physical Society (APS)
Published: Jun 15, 1986
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