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Influence of hydrostatic pressure on the platinum levels in silicon

Influence of hydrostatic pressure on the platinum levels in silicon Platinum diffusion gives rise to three energy levels in our silicon samples. Deep-level transient spectroscopy detects acceptor levels at E c - 235 meV and E c - 500 meV, and a donor level at E v + 320 meV. The energy shift under hydrostatic pressure for either level was measured for pressures up to 0.50 GPa. The Pt acceptor at E c - 235 meV reveals the same pressure coefficient as was already reported for the well-known A center. This common property supports the recently proposed model of a vacancy-related structure for the substitutional Pt. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Influence of hydrostatic pressure on the platinum levels in silicon

Physical Review B , Volume 33 (12) – Jun 15, 1986
4 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1986 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.33.8892
Publisher site
See Article on Publisher Site

Abstract

Platinum diffusion gives rise to three energy levels in our silicon samples. Deep-level transient spectroscopy detects acceptor levels at E c - 235 meV and E c - 500 meV, and a donor level at E v + 320 meV. The energy shift under hydrostatic pressure for either level was measured for pressures up to 0.50 GPa. The Pt acceptor at E c - 235 meV reveals the same pressure coefficient as was already reported for the well-known A center. This common property supports the recently proposed model of a vacancy-related structure for the substitutional Pt.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jun 15, 1986

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