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Flux-creep activation energies in Tl 2 Ba 2 CaCu 2 O x single crystals

Flux-creep activation energies in Tl 2 Ba 2 CaCu 2 O x single crystals The measured frequency shift in temperature of the ac susceptibility Tl 2 Ba 2 CaCu 2 O x single crystals is modeled by an Arrhenius-like expression to give flux-creep activation energies at various applied ac magnetic fields ranging from 15 to 200 Oe. The activation energies range from 288±14 meV in an applied ac magnetic field of 15 Oe to 25±3 meV in 200 Oe. Considerable flux creep is observed. It is estimated that H c 1 at a temperature of about 100 K is approximately 10 Oe. The results are interpreted in terms of Anderson flux-creep model and the activation-energy values reported here are similar to those deduced from magnetic-field-dependent resistivity measurements on the Tl-based single crystals, textured films, and bulk samples. The field dependence of the activation energies is observed to vary as 1/ √ H . This low-field dependence is explained by a scaling argument where the vortex volume is approximated by ξ 2 a 0 , with ξ the coherence length in the ab plane and a 0 the Abrikosov vortex-lattice spacing along the c axis of the crystal lattice. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

Flux-creep activation energies in Tl 2 Ba 2 CaCu 2 O x single crystals

Physical Review B , Volume 45 (10) – Mar 1, 1992
4 pages

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Publisher
American Physical Society (APS)
Copyright
Copyright © 1992 The American Physical Society
ISSN
1095-3795
DOI
10.1103/PhysRevB.45.5641
Publisher site
See Article on Publisher Site

Abstract

The measured frequency shift in temperature of the ac susceptibility Tl 2 Ba 2 CaCu 2 O x single crystals is modeled by an Arrhenius-like expression to give flux-creep activation energies at various applied ac magnetic fields ranging from 15 to 200 Oe. The activation energies range from 288±14 meV in an applied ac magnetic field of 15 Oe to 25±3 meV in 200 Oe. Considerable flux creep is observed. It is estimated that H c 1 at a temperature of about 100 K is approximately 10 Oe. The results are interpreted in terms of Anderson flux-creep model and the activation-energy values reported here are similar to those deduced from magnetic-field-dependent resistivity measurements on the Tl-based single crystals, textured films, and bulk samples. The field dependence of the activation energies is observed to vary as 1/ √ H . This low-field dependence is explained by a scaling argument where the vortex volume is approximated by ξ 2 a 0 , with ξ the coherence length in the ab plane and a 0 the Abrikosov vortex-lattice spacing along the c axis of the crystal lattice.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Mar 1, 1992

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