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/lp/american-physical-society-aps/exchange-enhancement-of-the-spin-splitting-in-a-gaas-ga-x-al-1-x-as-Hw9UUXKtCa
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- Publisher
- American Physical Society (APS)
- Copyright
- Copyright © 1988 The American Physical Society
- ISSN
- 1095-3795
- DOI
- 10.1103/PhysRevB.37.1294
- Publisher site
- See Article on Publisher Site
Abstract
The spin splitting in a GaAs- Ga x Al 1 - x As heterojunction has been studied by using the coincidence technique, where the Shubnikov – de Haas oscillations of the conductivity are measured in tilted magnetic fields, and by measurements of the activation energy associated with spin-split conductivity minima. The spin splitting is found to be very strongly enhanced by exchange interactions, and values for the effective g factor as high as 6.2 have been found. The coincidence measurements were made at 0.37 K, and required the use of tilt angles in the range 85° – 89°. These show evidence of oscillatory spin splitting determined by the relative spin-population difference within the Landau levels. The activation energy was also studied as a function of tilt angle, and shows that the spin splitting is primarily determined by the perpendicular component of magnetic field for well-resolved levels. The dependence upon total field is sublinear and shows a saturation behavior at high tilt angles.
Journal
Physical Review B – American Physical Society (APS)
Published: Jan 15, 1988