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χ ( 3 ) analysis of all-optical polarization switching in semiconductor quantum wells

χ ( 3 ) analysis of all-optical polarization switching in semiconductor quantum wells A theoretical and experimental analysis of an all-optical polarization switching technique that has been demonstrated recently is presented. The analysis is restricted to the lowest-order nonlinear regime ( χ ( 3 ) regime). The theory allows for a detailed analysis of the switching action, which is based on near-resonant optical excitation of spin-polarized excitons. The theoretical results are found to be in good agreement with experimental data. The respective contributions of phase-space blocking and various many-particle interaction and correlation terms to the switching process are identified and studied as function of experimentally adjustable parameters. The resulting parametric dependence of the switching action is used as a basis for proposals for further optimization of the device. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Physical Review B American Physical Society (APS)

χ ( 3 ) analysis of all-optical polarization switching in semiconductor quantum wells

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Publisher
American Physical Society (APS)
Copyright
Copyright © 2004 The American Physical Society
ISSN
1550-235X
DOI
10.1103/PhysRevB.69.235329
Publisher site
See Article on Publisher Site

Abstract

A theoretical and experimental analysis of an all-optical polarization switching technique that has been demonstrated recently is presented. The analysis is restricted to the lowest-order nonlinear regime ( χ ( 3 ) regime). The theory allows for a detailed analysis of the switching action, which is based on near-resonant optical excitation of spin-polarized excitons. The theoretical results are found to be in good agreement with experimental data. The respective contributions of phase-space blocking and various many-particle interaction and correlation terms to the switching process are identified and studied as function of experimentally adjustable parameters. The resulting parametric dependence of the switching action is used as a basis for proposals for further optimization of the device.

Journal

Physical Review BAmerican Physical Society (APS)

Published: Jun 15, 2004

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