“Whoa! It's like Spotify but for academic articles.”

Instant Access to Thousands of Journals for just $40/month

The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures

The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures This article shows that the presence of low‐temperature‐grown GaAs (LT‐GaAs) in LT‐GaAs/AlAs/GaAs:Si heterostructures increases the Al/Ga interdiffusion at the heterostructure interfaces. The interdiffusion enhancement is attributed to the presence of Ga vacancies ( V Ga ) in the As‐rich LT‐GaAs, which diffuses from a supersaturation of V Ga frozen‐in during sample growth. Chemical mapping, which distinguishes between the AlAs and GaAs lattices at an atomic scale, is used to measure the Al concentration gradient in adjacent GaAs:Si layers. A correlation is observed between the Al/Ga interdiffusion and the gate breakdown voltage in metal‐insulator field‐effect transistor structures containing LT‐GaAs. © 1996 American Institute of Physics. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Applied Physics American Institute of Physics
Loading next page...

You're reading a free preview. Subscribe to read the entire article.

And millions more from thousands of peer-reviewed journals, for just $40/month

To be the best researcher, you need access to the best research

  • With DeepDyve, you can stop worrying about how much articles cost, or if it's too much hassle to order — it's all at your fingertips. Your research is important and deserves the top content.
  • Read from thousands of the leading scholarly journals from Springer, Elsevier, Nature, IEEE, Wiley-Blackwell and more.
  • All the latest content is available, no embargo periods.

Stop missing out on the latest updates in your field

  • We’ll send you automatic email updates on the keywords and journals you tell us are most important to you.
  • There is a lot of content out there, so we help you sift through it and stay organized.