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Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As



Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g g -factor of about 0.2–0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g g -factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p - d p - d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole–light-hole mixing. An abnormal dip structure of the g g -factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect.



Journal of Applied PhysicsAmerican Institute of Physics

Published: Mar 1, 2008

Keywords: Curie temperature; exchange interactions (electron); gallium arsenide; g-factor; heavily doped semiconductors; III-V semiconductors; Kerr magneto-optical effect; manganese compounds; semimagnetic semiconductors; time resolved spectra; Zeeman effect

DOI: 10.1063/1.2842400

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