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Electrical analysis of Al/p-Si Schottky diode with titanium dioxide (TiO 2 ) thin film was performed at room temperature. The forward and reverse bias current–voltage ( I – V ) characteristics ...
consistency and validity. The current transport mechanism was investigated based on the forward -bias I – V plot . Finally, the reverse bias I – V performance of MS SD is controlled by Schottky emission mechanism ...
, the dominant current conduction mechanisms of the MIS diode were also investigated by forward bias ln( I ) − ln( V ) and reverse bias F F 0.5 ln( I ) − V plot . ...
. The energy dependent profiles of Nss were also obtained from the forward bias I – V data by considering voltage dependent ideality factor (n) and effective barrier height (Φe) for two type diodes . The values ...
in order to enhance the cross-regulation and efficiency [32]. Its maximum efficiency is 87%, around 3% greater than a traditional Schottky diode . This converter exhibits high gains in theory. Whenever ...
of photo-induced current ( I ) and voltage ( V ). The PCE is the ratio of the maximum electrical power produced by the device and the incident light power. For the lab standard, an AM1.5 solar spectrum ...
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