Access the full text.
Sign up today, get unlimited access with DeepDyve Pro!
barrier on n ‐ type silicon. Preinesberger et al. were the first to observe that growth of DySi 2 ‐x on Si ( 001 ) resulted in formation of nanowires (wires) along the two orthogonal Si [110] directions ...
a surface dipole on Si ( 001 ) that increases the surface potential from 0.26 to 0.42 eV with respect to 2 × 1 reconstructed Si ( 001 ). DySi nanowires showed a 0.2–0.23 eV lower work function than 2 −x DySi ...
Access the full text.
Sign up today, get unlimited access with DeepDyve Pro!