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-resolved photoluminescence , and band structure calculations. Theimplantation and annealing induces Zn /Mg intermixing, resulting in graded quantum wellinterfaces. This reduces the quantum-confined Stark shift ...
The characteristic effects of doping with impurities such as Si,Ge, Se, O, Mg, Be, and Zn on the electrical and optical propertiesof GaN -based materials are reviewed. In addition, the roles ...
into GaN . A wide range of implantation and annealing studies were performed with several dopant species ( Zn , Nd, Er, Ar). Room temperature ion implantation was performed on MOCVD grown GaN samples ...
We report on the characterization of bulk and epitaxial ZnO films doped by nitrogen. The ZnO thin films were grown on GaN templates and on ZnO single crystals by vapor phase deposition using Zn ...
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