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InSb films having 77 K mobilities above 100000 cm2 V-1 s-1, 77 K carrier concentrations less than 5*1015 cm-3 and X-ray rocking curve widths of 100 arcsec have been grown on GaAs using molecular beam ...
. Japanese Journal of Applied Physics Vol. 47, No. 1, 2008, pp. 558–560 #2008 The Japan Society of Applied Physics Thin InSb films on GaAs substrates by Molecular Beam Epitaxy Zhanguo LI , Guojun LIU, Mei LI ...
We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal ...
This paper discusses the optimization of the growth temperature and Sb/In ratio of 1 µm InSb thin films grown on GaAs substrates by molecular beam epitaxy due to the InSb materials with larger ...
The MBE growth of In0.2Ga0.8Sb is examined. Undoped films show p-type conduction. Sulfur doped n-type In0.2Ga0.8Sb with H2S gas, which has a mobility of 3000–3500 cm2/V·sec, is obtained. The value ...
We describe the epitaxial growth of InSb films on both Si (001) and GaAs (100) substrates using molecular - beam epitaxy and discuss the structural and electrical properties of the resulting films ...
InSb films on GaAs (001) substrates with and without GaAs buffer layer have been grown by molecular beam epitaxy . Rather than surface undulations, aligned ripples and pyramidal hillocks along ...
, the growth of high quality InSb thin films is realized. Chin. Phys. B Vol. 30, No. 2 (2021) 028504 Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb ...
We have employed molecular beam epitaxy in the growth of InSb on GaAs and InP. The transport, optical and structural properties of the films were investigated by in-situ reflection high energy ...
Molecular beam epitaxy is used to prepare high-mobility films of InSb and InAs either homoepitaxially or heteroepitaxially on GaAs substrates. Silicon donors and beryllium acceptors can be introduced ...
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