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The minority carrier diffusion length is measured in heavily doped silicon substrates of n+–n epitaxial wafers. Each sample is converted to a one‐sided n+–p junction by diffusion of boron through ...
]. With finite p-type doping , the holes tend to accumulate at the negative piezopotential side. The negative side of piezopotential is thus partially screened by holes , while the positive side of it is preserved ...
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