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Experimental evidence for a kinetic model of hydrogen incorporation into sputtered a‐Si films;



The dependence of hydrogen content, on the partial pressure of hydrogen, substrate bias, deposition rate, and deposition temperature was found to be consistent with a kinetic model of hydrogen incorporation into a‐SiH; x films, produced by reactive sputtering in an Ar+H plasma.



AIP Conference ProceedingsAmerican Institute of Physics

Published: Jun 1, 1981


DOI: 10.1063/1.33079

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