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, was achieved at 323 K for Bi0.4Sb1.6Te3. Journal of the Korean Physical Society, Vol. 69, No. 8, October 2016, pp. 1328∼1334 Mechanical and Thermoelectric Properties of Bi Sb Te Prepared by Using 2 − x x 3 ...
/ Bi Sb Te Composite Materials 0.5 1.5 3 1 1 1 1 WANTING ZHU, WENHUA HU, PING WEI, XIAOLEI NIE, 1,2 and WENYU ZHAO 1.—State Key Laboratory of Advanced Technology for Materials Synthesis and Processing ...
between two- and three-dimension. 10.1088/1361-648X/aac59b We show Shubnikov–de Haas (SdH) oscillations in topological insulator ( Bi Sb ) Te x 1− x 2 3 ak fl es whose carrier types are p -type ( x = 0.29 ...
, Vol. 44, No. 10, 2015 DOI: 10.1007/s11664-015-3782-9 2015 The Minerals, Metals & Materials Society Effect of Doping with Substituent Bi Atoms on the Electrical Transport Properties of a Bi Sb Te Film ...
electronic transport in the films and enhance figure of merit. Hot wall technique was used to grow block single crystal films of Bi Te and solid solutions of 2 3 Bi Sb Te on mica (muscovite) substrates. X -ray ...
, Japan those of the state-of-the-art TE materials such as Bi Te -and 2 3 Received: 14 July 2006/Accepted: 24 August 2006 PbTe-based alloys [6, 7]. Published online: 26 September 2006 • © Springer-Verlag ...
/s11664-016-4962-y 2016 The Minerals, Metals & Materials Society Investigation of Thermoelectric Properties with Dispersion of Fe O and Fe-85Ni Nanospheres in Bi Sb Te Matrix 2 3 0.5 1.5 3 1 1 2 SANG MIN ...
provided an ideal testing ground to investigate the influence of composition (i.e. x and y values), the content of Mg, as well as the optimal amount of Sb / Bi dopants on the TE performance [33,76–78 ...
volume contraction is believed to be due to the coupling effect of the Mg and Sb dopants. Table 2 . Room-temperature physical properties of Ge0.95-xMg0.05SbxTe ( x = 0, 0.05, 0.075, and 0.1). The data ...
to its small band gap and high electron concentration. In this study, remarkable increase in ther- 1 Introduction moelectric performance in the n-type Bi Sb Te com- 1- x x pounds through tuning the carrier ...
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