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First‐principles density functional theory is used to explore the possibility of tuning effective work function of high dielectric / metal gate stacks. Using HfO2/Cu as an example, we demonstrate ...
This work demonstrates the valence band-edge effective work function (φ m ,eff) of a titanium nitride (TiN) gate with a hafnium oxide (HfO2) dielectric using a cost- effective , low-complexity gate ...
The structure and valence transitions in multi‐valent transition metal oxides are closely associated with the intrinsic functionalities that exhibit wide applications in various fields ...
of effect work function , the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate ...
electrodes and As complementary metal - oxide -semiconductor (CMOS) hafnium based high -k gate dielectrics is one of the most scaling requirement demands continue to shrink, the gate promising gate stacks ...
of the TiAlC film were investigated by using metal - oxide -semiconductor capacitors for capacitance-voltage measurement. The effective work function of the TiAlC film can be tuned from 4.49 eV to 4.79 eV using ...
to device performances in optoelectronics. In this work , trilayer dielectric / metal / dielectric (D/M/D) nanomesh electrodes are reported with precisely controlled perforation size, wire width, and uniform hole ...
p-channel metal oxide semiconductor field- effect transistor (pMOSFET) devices with a ternary HfxMoyNz metal gate and a Gd2O3 high -k gate dielectric have been demonstrated for the first time ...
electrodes, both oxidic [18] and metallic ,[19] SAMs allow to tune the surface energies[18] and work functions (WF)[20] over a wide range relying on the inherent molecular ...
threshold voltage (VTH). A major challenge with capping layers is to achieve adequate effective work function shifts without large increases in equivalent oxide thickness (EOT) (ΔEOT). In this work ...
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