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Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate ...
not utilized.However, integrated circuits often require not only transistors , but also resistiveload devices . Here we show that many of the metallic carbon nanotubes thatare deposited on the substrate along ...
Monochiral single-walled carbon nanotubes (SWCNTs) can enable high-performance carbon -based electronic devices and integrated circuits. However, their fabrication often requires complex SWCNT ...
An ultimate scaling in the gate width in a carbon nanotube field-effect transistor (CNTFET) isdemonstrated with a gate electrode which is formed by another CNT (width of3 nm) with conventional ...
and provide gate delays as low as 5 ps. The CNT gated CNT transistor devices are fabricated using a two-step chemical vapour deposition technique. The measured transfer characteristics are in very good ...
nanotube can be grown between the patterned chemical catalyst using the thermal CVD process. The single electron transistor was fabricated using the position controlled grown carbon nanotube as a channel ...
Electronic detection of biomolecules is gradually emerging as effective alternative of optical detection methods. We describe transistor devices with carbon nanotube conducting channels that have ...
reduced barrier height of SWCNT/pentacene interface. Keywords: Organic transistor , carbon nanotube , electrical characteristic 1. Introduction Organic field-effect transistors (OFETs) have attracted ...
reduced barrier height of SWCNT/pentacene interface. Keywords: Organic transistor , carbon nanotube , electrical characteristic 1. Introduction Organic field-effect transistors (OFETs) have attracted ...
Abstract This work describes the effects of microwave irradiation on the transfer characteristics of single-walled carbon - nanotube network transistors . The microwave treatment dramatically increases ...
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