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Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption


X-ray absorption near-edge structure (XANES), extended x-ray absorption fine structures (EXAFS), and photoluminescence measurements were used to elucidate the microstructural and photoluminescence properties of ZnO nanowires (ZnO-NWs) that had been treated with Eu by thermal diffusion. The O K O K - and Eu L 3 Eu L 3 -edge XANES and EXAFS spectra at the Zn K Zn K - and Eu L 3 Eu L 3 -edge verified the formation of Eu 2 O 3 Eu 2 O 3 -like layer on the surface of ZnO-NWs. X-ray diffraction, XANES and EXAFS measurements consistently suggest the lack of substitutional doping of Eu ions at the Zn ion sites in the interior of ZnO-NWs. The clear sharp and intense emission bands in the range 610–630 nm of Eu-treated ZnO-NWs originated from the intra- 4 f 4 f transition of Eu ions in the Eu 2 O 3 Eu 2 O 3 -like surface layer.



Applied Physics LettersAmerican Institute of Physics

Published: Feb 8, 2010

Keywords: europium; EXAFS; II-VI semiconductors; nanowires; photoluminescence; thermal conductivity; wide band gap semiconductors; XANES; zinc compounds

DOI: 10.1063/1.3304071

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