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, INTERFACES, AND THIN FILMS Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films a,b a,b, a c G. K. Krivyakin , V. A. Volodin *, G. N. Kamaev , and A. A. Popov Rzhanov ...
Kinetics of isothermal crystallization has been studied in the temperature range from 375 to 525°C. The kinetic curves are obtained and the rate of isothermal transformation of amorphous films ...
Crystallization morphologies and kinetic processes have been studied in amorphous germanium (a‐Ge) films in contact with aluminium (Al) layers of various thickness. The well‐known spherulitic ...
The results of an experimental investigation of the kinetics of crystallization of amorphous germanium in three‐layer films AgGeAg are presented. Crystallization temperatures in “sandwiches ...
The crystal growth kinetics of germanium disulfide in undercooled melts has been studied by optical microscopy under isothermal conditions. The linear growth kinetics of GeS 2 has been observed ...
be partly associated with the anisotropy of conductivity. Ambient oxygen adsorbed on the film surface seems to have no significant influence on annealing kinetics of defects. Elimination of oxygen adsorption ...
sensor based on optical power measurement as a function of temperature for temperature monitoring. For this purpose, crystallization kinetics and crystal structures of Ge–Se binary chalcogenide glasses ...
Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic ...
The kinetics of laser pulse‐induced crystallization of amorphous Ge films are investigated by time‐resolved transmission electron microscopy. Crystallization starts above a threshold energy of ≈ 4 μJ ...
The crystallization kinetics of thin (35 and 60 nm) amorphous as-deposited Ge films were studied using diffraction limited laser beam irradiation and laser pulses between 30 ns and 1 ms ...
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