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Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO 3 /Y 2 O 3 /Si YMnO 3 /Y 2 O 3 /Si structure



Ferroelectric properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure were investigated using the Pt/YMnO 3 /Y 2 O 3 /Si Pt/YMnO 3 / Y 2 O 3 / Si structure. The ferroelectric C – V C – V hysteresis was observed for not only the Pt/YMnO 3 (0001)/Y 2 O 3 /Si Pt/YMnO 3 ( 0001 ) /Y 2 O 3 /Si capacitor but also the Pt/amorphousYMnO 3 /Y 2 O 3 /Si Pt/amorphousYMnO 3 /Y 2 O 3 /Si capacitor. The polarization evaluated by conventional C – V measurement should include interfacial polarization and rearrangement of the space charge together with the spontaneous polarization by ferroelectricity. To eliminate the generation of the interfacial polarization and the rearrangement of the space charge, the shorter charging time should be used to evaluate the ferroelectricity of the MFIS capacitor. Therefore, we propose the pulsed C–V measurement as a new method for evaluating the MF(I)S capacitor. © 2000 American Institute of Physics.



Journal of Applied PhysicsAmerican Institute of Physics

Published: Apr 1, 2000

Keywords: yttrium compounds; ferroelectric materials; ferroelectric thin films; dielectric hysteresis; dielectric polarisation; space charge

DOI: 10.1063/1.372364

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