TY - JOUR
AU1 - Steiger, Juergen
AU2 - Karg, Siegfried
AU3 - von Seggern, Heinz
AB - The methods of thermally stimulated currents (TSC) and thermally stimulated luminescence (TSL) were employed to reveal the trap structure of the most prominent organic semiconductors materials such as tris-8-(hydroxyquinoline) (Alq 3 ), N-N'-di(1-naphtyl)-N-N'-diphenylbenzidine ((alpha) -NPD), and 4,4',4'-tris-(N-2-naphtyl)-N-phenylamino- triphenylamine (1-Naph-DATA). The energetic trap depths and a lower limit of the trap densities were derived for all investigated materials by means of the initial-rise method and curve fitting techniques. Typical activation energies range between 0.1 and 0.6 eV and trap concentrations differ between 10 14 and 10 17 cm -3 . Most materials exhibit trap levels with a single activation energy, however, in Alq 3 a brought distribution of trap depths will be reported. In addition, the polarity of the dominant trap levels was determined by a comparison of TSC spectra from optically and electrically filled traps. Besides the trap detection and characterization the effect of doping and accelerated aging on the trap structure will be shown. TSC and TSL results on rubrene doped Alq 3 reveals a characteristic shift in the trap depth indicating new rubrene related trapping site. The effect of aging on the trap structure of organic semiconductors in 'potentially harmful' atmospheres such as oxygen and humidity and their correlation to I-V characteristics will also be reported.
TI - Electronic traps in OLED transport layers: influence of doping and accelerated aging
JF - Proceedings of SPIE
DO - 10.1117/12.416902
DA - 2001-02-02
UR - https://www.deepdyve.com/lp/spie/electronic-traps-in-oled-transport-layers-influence-of-doping-and-RB0O7mwTcX
SP - 256
EP - 264
VL - 4105
IS - 1
DP - DeepDyve