%0 Journal Article %T Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors %A Sirota, Benjamin %A Glavin, Nicholas %A Krylyuk, Sergiy %A Davydov, Albert %A Voevodin, Andrey %J Scientific Reports %V 8 %N 1 %P 1-8 %D 2018-06-06 %I Nature Publishing Group UK %~ DeepDyve