%0 Journal Article
%T Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
%A Sirota, Benjamin
%A Glavin, Nicholas
%A Krylyuk, Sergiy
%A Davydov, Albert
%A Voevodin, Andrey
%J Scientific Reports
$V 8
%N 1
%P 1-8
%D 2018
%I Nature Publishing Group UK