%0 Journal Article
%T The hydrogenic-electron model of accumulation of surface states on the oxide-semiconductor interface under the effects of ionizing radiation
%A Sogoyan, A.
%A Cherepko, S.
%A Pershenkov, V.
%J Russian Microelectronics
%V 43
%N 2
%P 162-164
%@ 1063-7397
%D 2014-03-26
%I Pleiades Publishing
%~ DeepDyve