TY - JOUR
AU - 
AB -  Book Reviews Growth and Characterization of Semiconductors. By R.A. Stradling and P. C. Klipstein (Eds.) Adam Hilger, Bristol, Philadelphia and New York 1991, 239 pages, 150 figures and 4 tables. (ISBN 0-85274-131-6) Paperback £ 19.50. This book presents on 240 pages and in eleven chapters, each written by an expert in the field, a selection of epitaxial growth and defect characterization methods of semiconductor science and technology. It collects the papers presented at a short course held at the Imperial College in London. Three chapters are devoted to epitaxial growth, one to the basics of epitaxy, the other two to Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD), the remaining eight chapters deal with characterization methods, with electron microscopy (scanning and high resolution, SEM and HREM), optical methods (photoluminescence and localized vibrational spectroscop mode, PL and LVM), electron paramagnetic resonance (EPR), capacitance spectroscopy (DLTS) and electrical methods It is evident that a book of this size can neither treat all relevant methods nor cover those methods, that are treated, in great detail. For example the reader will not find X-ray and nuclear physics methods in solid state or Raman spectroscopy in this book. He also 
TI - Growth and Characterization of Semiconductors.
JF - Zeitschrift für Kristallographie - Crystalline Materials
DO - 10.1524/zkri.1993.204.Part-1.158
DA - 1993-01-01
UR - https://www.deepdyve.com/lp/de-gruyter/growth-and-characterization-of-semiconductors-2Cr93epca8
SP - 158
VL - 204
IS - 1
DP - DeepDyve
ER -