TY - JOUR
AU - Francis, L. F.
AB - Ferroelectric Thin Films in Micro- Upper Electrode Si N« Piezoelectric , Lower Electrode \ / .PSG electromechanical Systems Applications Silicon Wafe D.L. Polla and L.F Franci . s Upper Electrode Si3N4 . Piezoelectric . / / Lower Electrode \ \ t I PSG Introduction Ferroelectric ceramic thin films fit allows electromechanical sensing and naturally into the burgeoning field of mi- actuation. The spontaneous charge in- croelectromechanical systems (MEMS). duced from mechanical strain in a ferro- Microelectromechanical systems com- electric thin film is easily sensed across a bine traditional Si integrated-circuit (IC) capacitor structure using a voltage or electronics with micromechanical sens- charge-sensitive amplifier. Actuators 1 2 ing and actuating components. ' The based on ferroelectrics exhibit high force term MEMS has become synonymous generation for moderate voltage inputs. with many types of microfabricated In addition ferroelectric actuators and Upper Electrode Electrode devices such as accelerometers, infrared sensors do not dissipate power in the detectors, flow meters, pumps, motors, static mode, and the ferroelectric's excel- and mechanical components. These lent dielectric properties result in ex- devices have lateral dimensions in the tremely low noise during operation. range of 10 yum-10 mm. Theultimate Unlike nonferroelectric piezoelectric ma- goal of MEMS is 
TI - Ferroelectric Thin Films in Microelectromechanical Systems Applications
JF - MRS Bulletin
DO - 10.1557/s0883769400035934
DA - 1996-07-01
UR - https://www.deepdyve.com/lp/springer-journals/ferroelectric-thin-films-in-microelectromechanical-systems-yiNvdClasd
SP - 59
EP - 65
VL - 21
IS - 7
DP - DeepDyve
ER -