TY - JOUR
AU1 - Sangameswaran, Sandeep
AU2 - De Coster, Jeroen
AU3 - Linten, Dimitri
AU4 - Scholz, Mirko
AU5 - Thijs, Steven
AU6 - Groeseneken, Guido
AU7 - De Wolf, Ingrid
AB - The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.
TI - Investigating ESD sensitivity in electrostatic SiGe MEMS
JF - Journal of Micromechanics and Microengineering
DO - 10.1088/0960-1317/20/5/055005
DA - 2010-05-01
UR - https://www.deepdyve.com/lp/iop-publishing/investigating-esd-sensitivity-in-electrostatic-sige-mems-yeQ8830iYP
SP - 055005
VL - 20
IS - 5
DP - DeepDyve
ER -