TY - JOUR
AU1 - Tang, Ying
AU2 - Jones, Ed
AU3 - Despres, Joseph
AU4 - Murthi, Kavita
AU5 - Sweeney, Joseph
AB - Silicon carbide is one of the major semiconductor materials used for manufacturing innovative power devices, especially for high power applications. Aluminum is the primary implant species that is used for p-type doping of silicon carbide (SiC) power transistors. Because there are no suitable aluminum gaseous dopant sources available for ion implant, the most common approach is to generate aluminum ions by installing a solid aluminum target inside the arc chamber. The solid target is then reacted, through physical and chemical mechanisms, by using argon and/or a fluoride containing gas. Presented here, we examine both aluminum oxide (Al2O3) and aluminum nitride (AlN) targets in combination with different co-gases to assess Al+ implantation performance. The gases tested include boron trifluoride (BF3), phosphorus trifluoride (PF3) as well as other fluoride gases and their mixtures. The performance factors characterized include aluminum beam current, beam spectra, and source conditions for each of the various options. This work concludes with a recommendation on the optimal solution for the aluminum implant application.Graphical abstract[graphic not available: see fulltext]
TI - Investigation of source materials, co-gases, and methods for aluminum ion implantation
JF - MRS Advances
DO - 10.1557/s43580-022-00426-9
DA - 2022-12-08
UR - https://www.deepdyve.com/lp/springer-journals/investigation-of-source-materials-co-gases-and-methods-for-aluminum-xkkvpMHTdp
SP - 1
EP - 3
VL - OnlineFirst
IS - 
DP - DeepDyve
ER -