TY - JOUR
AU - Saitou, Takashi
AB - We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL since 2003. Unique original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulse shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. The theoretical and experimental data have clearly showed the advantage of our proposed strategy. We demonstrated 117W EUV power (I/F clean in burst), 50 kHz, 22 hours stable operation at Pilot #1 device. Target of this device is 250 W EUV power by 27 kW pulsed CO2 driver laser system.
TI - Development of 250W EUV light source for HVM lithography
JF - Proceedings of SPIE
DO - 10.1117/12.2261075
DA - 2017-02-22
UR - https://www.deepdyve.com/lp/spie/development-of-250w-euv-light-source-for-hvm-lithography-xQD4P68JZc
SP - 1009702
EP - 1009702-7
VL - 10097
IS - 
DP - DeepDyve
ER -