TY - JOUR
AU1 - Hosaka, Yasuharu
AU2 - Obonai, Toshimitsu
AU3 - Dobashi, Masayoshi
AU4 - Nakayama, Tomonori
AU5 - Shima, Yukinori
AU6 - Ohno, Masakatsu
AU7 - Yamazaki, Shunpei
AB - This work verifies the existence of more than one cause of NBTIS degradation of oxide semiconductor FETs by analyzing its time dependence. As defects in a gate insulator (GI) that cause NBTIS degradation, indium diffused into the GI also serves as hole trap defects besides the NBOHC defects proposed by Tsubuku et al.
TI - P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS
JF - Sid Symposium Digest of Technical Papers
DO - 10.1002/sdtp.15683
DA - 2022-06-01
UR - https://www.deepdyve.com/lp/wiley/p-8-analysis-of-degradation-mechanism-of-oxide-semiconductor-fets-with-xMo4zH744p
SP - 1066
EP - 1069
VL - 53
IS - 1
DP - DeepDyve
ER -