TY - JOUR
AU - Rogge, Sven
AB - Journal of Physics: Condensed Matter J. Phys.: Condens. Matter 27 (2015) 150301 (3pp) doi:10.1088/0953-8984/27/15/150301 Preface The controlled introduction of dopant atoms to semiconducting host materials is the Guest Editors corner stone of electronic device fabrication. Dopant atoms provide a means to Steven R Schofield modulate the electronic, optical, and magnetic properties of semiconductors [1], London Centre for and it is now possible to control dopant profiles with true atomic-scale precision in Nanotechnology, and the laboratory [2]. Moreover, industrial fabrication methods are now capable of Department of Physics and producing features with sub-10 nm precision [3] which therefore contain only a Astronomy, University small numbers of dopants. This extraordinary control of dopant atom placement College London, London, and semiconductor feature patterning provides exciting possibilities for the creation WC1H 0AH, UK of quantum (opto)electronic devices including devices for quantum information E-mail: s.schofield@ucl.ac.uk processing. Furthermore, it can be argued that building such devices in semiconductor hosts provides a more straightforward route for their incorporation Sven Rogge with conventional semiconductor electronics compared with competing quantum Centre for Quantum device architectures. At the same time there are new challenges for conventional Computation and devices at these length scales; the very small number of dopants 
TI - Single dopants in semiconductors
JF - Journal of Physics: Condensed Matter
DO - 10.1088/0953-8984/27/15/150301
DA - 2015-04-22
UR - https://www.deepdyve.com/lp/iop-publishing/single-dopants-in-semiconductors-wf0mcS5hne
SP - 150301
VL - 27
IS - 15
DP - DeepDyve
ER -