TY - JOUR
AU - Ku, Yi-Sha
AB - We present a new metrology system based on a fringe reflection method for warpage characterizations during wafer thinning and temporary bonding processes. A set of periodic fringe patterns is projected onto the measuring wafer and the reflected fringe images are captured by a CCD camera. The fringe patterns are deformed due to the slope variation of the wafer surface. We demonstrate the use of phase-shit algorithms, the wafer surface slope variation and quantitative 3D surface profile even tiny dimples and dents on a wafer can be reconstructed. The experimental results show the warpages of the bonded wafer are below 20 μm after thinning down to the nominal thickness of 75 μm and 50 μm. The measurement precision is better than 2 um.
TI - Wafer level warpage characterization of 3D interconnect processing wafers
JF - Proceedings of SPIE
DO - 10.1117/12.916591
DA - 2012-02-13
UR - https://www.deepdyve.com/lp/spie/wafer-level-warpage-characterization-of-3d-interconnect-processing-wbUBnDtbAi
SP - 832415
EP - 832415-6
VL - 8324
IS - 1
DP - DeepDyve
ER -