TY - JOUR
AU1 - Kim, Seok-Kyun
AB - To achieve 100 nm DRAM full chip with 0.63 NA ArF lithography we used a new type of off-axis illumination, crosspole illumination which has four poles on axis. For lower than 0.33 k 1 process double exposure technology has been introduced which is exposing cell and core/periphery region separately with different illumination conditions. But with crosspole 0.33 to 0.31 k 1 process could be possible without double exposure. Advantages and disadvantages of crosspole illumination and successful result of printing 100 nm DRAM full chip are shown in this paper. And also ArF lithography issues occurred during processing DRAM full chip are reported such as lens heating, contamination optics and reticles, overlay errors induced by electron beam curing process and so on. To simulate patterning result we used HOST (Hynix OPC simulation tool) based on diffused aerial image model (DAIM). For all kinds of 100 nm DRAM patterns, we could get sufficient process latitude, more than 10% exposure latitude (EL) and 0.4 micrometers depth of focus (DOF). Also 95 nm DRAM cell patterns could be printed successfully with crosspole single exposure and this shows with 0.75 NA and 0.85NA ArF tools we can print 80 nm and 70 nm DRAM patterns, respectively.
TI - Printing 100-nm and sub-100-nm DRAM full-chip patterns with crosspole illumination in 0.63-NA ArF lithography
JF - Proceedings of SPIE
DO - 10.1117/12.474536
DA - 2002-07-15
UR - https://www.deepdyve.com/lp/spie/printing-100-nm-and-sub-100-nm-dram-full-chip-patterns-with-crosspole-w0EvhdrFEe
SP - 1504
EP - 1512
VL - 4691
IS - 1
DP - DeepDyve
ER -