TY - JOUR
AU - Jingping, Xu
AB - LaON, LaTiO and LaTiON films are deposited as gate dielectrics by incorporating N or/and Ti into La2O3 using the sputtering method to fabricate Ge MOS capacitors, and the electrical properties of the devices are carefully examined. LaON/Ge capacitors exhibit the best interface quality, gate leakage property and device reliability, but a smaller k value (14.9). LaTiO/Ge capacitors exhibit a higher k value (22.7), but a deteriorated interface quality, gate leakage property and device reliability. LaTiON/Ge capacitors exhibit the highest k value (24.6), and a relatively better interface quality (3.1 × 1011 eV−1 cm−2), gate leakage property (3.6 × 10−3 A/cm2 at Vg = 1 V + Vfb) and device reliability. Therefore, LaTiON is more suitable for high performance Ge MOS devices as a gate dielectric than LaON and LaTiO materials.
TI - Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and TiProject supported by the ...
JF - Journal of Semiconductors
DO - 10.1088/1674-4926/37/6/064006
DA - 2016-06-01
UR - https://www.deepdyve.com/lp/iop-publishing/electrical-properties-of-ge-metal-oxide-semiconductor-capacitors-with-vyVMmgPrKO
SP - 064006
VL - 37
IS - 6
DP - DeepDyve
ER -