TY - JOUR
AU1 - Kim, C.
AU2 - Kwon, K.‐W.
AB - A 3T‐2R non‐volatile ternary content‐addressable‐memory (nvTCAM) is proposed. Using a voltage limiter and self‐controlled bias circuit, both faster match line development and more sensing margin were possible when compared to the conventional nvTCAM. The voltage limiter provides a clear distinction between mismatch cell and ‘don't care’ cell. In case of nvTCAM made of non‐volatile memory (NVM) with a large resistance ratio, the sensing delay is reduced by 43.7% thanks to the combination of the self‐controlled bias circuit and voltage limiter. The proposed circuit works properly with NVM with resistance ratio as low as 3. The proposed nvTCAM cell was evaluated using a 65 nm CMOS process.
TI - 3T‐2R non‐volatile TCAM with voltage limiter and self‐controlled bias circuit
JF - Electronics Letters
DO - 10.1049/el.2017.1027
DA - 2017-06-01
UR - https://www.deepdyve.com/lp/wiley/3t-2r-non-volatile-tcam-with-voltage-limiter-and-self-controlled-bias-vszHK8JnK6
SP - 837
EP - 839
VL - 53
IS - 13
DP - DeepDyve
ER -